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Cambridge Studies in Semiconductor Physics and Microelectronic Engineering: Doping in III-V Semiconductors

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  • 632 stránok
  • 23 hodin čítania

Viac o knihe

Doping of III-V semiconductor compounds is the basis of virtually all semiconductor heterostructures and all optoelectronic devices. This is the first book to provide a comprehensive and thorough treatment of the subject, examining both theoretical and experimental aspects, and including important material on delta-doping. The author is involved in research at one of the world's foremost microelectronics laboratories, and while assessing the current state of the art, he also provides valuable introductory material for those beginning studies or research in this field.

Nákup knihy

Cambridge Studies in Semiconductor Physics and Microelectronic Engineering: Doping in III-V Semiconductors, Haroon Ahmad, E. Fred Schubert, Michael P. Peppers

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Rok vydania
2005
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