First book on the Einstein relation in compound semiconductors Covers the basic physics and applications to nanodevices, dispersion and various physical conditions Both a reference work for researchers and a study text for graduate students Includes supplementary material: sn. pub/extras
Focusing on the Fowler-Nordheim field emission (FNFE) from semiconductors and their nanostructures, this monograph explores a variety of materials, including quantum confined and non-linear optical substances. It examines FNFE in opto-electronic materials under light and intense electric fields, utilizing newly formulated electron dispersion laws. The text emphasizes the significance of band gap measurements in external fields and presents 200 open research problems, making it a valuable resource for Ph.D. students and researchers, as well as a foundation for graduate courses.
Focusing on the quantum effects in effective mass (EM) within heavily doped nanostructures, this monograph explores a variety of materials, including nonlinear optical compounds and super-lattices. It examines how intense light and strong electric fields alter semiconductor band structures, impacting the performance of optoelectronic devices. The study also addresses the measurement of band gaps under external fields and investigates the effects of magnetic quantization and field interactions on EM in these advanced materials.
Focusing on the dispersion relation in heavily doped nano-structures, this book explores various materials including III-V and II-VI semiconductors. It delves into the effects of magnetic fields, magneto inversion, and the role of photo-excitation on band structures. The text presents newly formulated electron dispersion laws that influence quantum effects in optoelectronic devices under light. Additionally, it features 200 open research problems, making it a valuable resource for graduate students, researchers, and engineers in the field.
Focusing on Einstein's Photoemission from heavily doped quantized structures, this monograph explores newly formulated electron dispersion laws across various advanced materials, including III-V, II-VI, and numerous nanostructures. It examines the effects of strong light waves and intense electric fields on optoelectronic properties, emphasizing experimental methods for measuring key physical quantities and band gaps. Additionally, the work investigates the impact of quantizing magnetic fields on photoemission. It includes 100 open research problems, serving as a resource for Ph.D. candidates and researchers in related fields.
The book delves into the thermoelectric power of nanostructured materials subjected to strong magnetic fields, focusing on quantum confinement and nonlinear optical properties. It explores various materials, including III-V and II-VI compounds, n-GaP, n-Ge, Te, graphite, and PtSb. By providing a comprehensive analysis, it aims to deepen the understanding of thermoelectric phenomena in these advanced materials, highlighting their potential applications in energy conversion and electronic devices.
Focusing on the Debye Screening Length (DSL) in semiconductors and nanostructures, this monograph explores various materials, including non-linear optical and III-V compounds, under strong light and electric fields. It introduces newly formulated electron dispersion laws relevant to quantum effect devices and discusses methods for measuring 2D and 3D DSL in optoelectronic materials. The text also examines the impact of electric and magnetic fields on DSL in heavily doped semiconductors. Additionally, it presents 150 open research problems, making it a valuable resource for PhD students and researchers in related fields.